JAN2N6898
Microsemi Corporation
Microsemi Corporation
MOSFET P-CHANNEL 100V 25A TO3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the JAN2N6898 single MOSFET from Microsemi Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Microsemi Corporation's JAN2N6898 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 15.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3
- Package / Case: TO-204AA, TO-3
Related Products
Diotec Semiconductor
DI008N09SQ
Alpha & Omega Semiconductor Inc.
AOD4160
Fairchild Semiconductor
FDMA710PZ
Harris Corporation
RFH75N05E
Infineon Technologies
IMT65R083M1HXTMA1
Renesas Electronics America Inc
N0608N#YW
Vishay Siliconix
SI5481DU-T1-GE3
Rohm Semiconductor
R6020ANZFL1C8
Renesas Electronics America Inc
NP90N04NUK-S18-AY
Central Semiconductor Corp