JAN2N6901
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 100V 1.69A TO205AF
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the JAN2N6901 single MOSFET from Microsemi Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Microsemi Corporation's JAN2N6901 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.07A, 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
Related Products
Fairchild Semiconductor
HUF75333P3_NS2552
Renesas Electronics America Inc
RJK0658DPA-WS#J5A
Infineon Technologies
64-2143PBF
Microsemi Corporation
JANTXV2N6790U
Alpha & Omega Semiconductor Inc.
AOTF5N50FD_001
Infineon Technologies
IPC50R045CPX2SA1
Renesas Electronics America Inc
UPA2394T1P-E1-A
Microsemi Corporation
JANTX2N6766
Renesas Electronics America Inc
2SJ328-Z-AZ
Infineon Technologies