JANSD2N3439L
Microchip Technology
Microchip Technology
RH POWER BJT
$278.42
Available to order
Reference Price (USD)
1+
$278.41500
500+
$275.63085
1000+
$272.8467
1500+
$270.06255
2000+
$267.2784
2500+
$264.49425
Exquisite packaging
Discount
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The JANSD2N3439L Bipolar Junction Transistor (BJT) from Microchip Technology is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the JANSD2N3439L is a reliable component for demanding applications. Microchip Technology's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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