JANSR2N7380
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 100V 14.4A TO257
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The JANSR2N7380 from Microsemi Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Microsemi Corporation's JANSR2N7380 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 14.4A, 12V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-257
- Package / Case: TO-257-3
Related Products
Diodes Incorporated
DMJ70H1D5SV3
Microsemi Corporation
APTC90SKM60T1G
IXYS
IXTV22N50PS
Alpha & Omega Semiconductor Inc.
AOI452A
IXYS
IXFD23N60Q-72
NXP USA Inc.
PMV62XN,215
IXYS
IXUV170N075S
Infineon Technologies
SPP20N60C3
Nexperia USA Inc.
PH5830DLSX
Central Semiconductor Corp