JANTX2N6301P
Microchip Technology
Microchip Technology
POWER BJT
$43.98
Available to order
Reference Price (USD)
1+
$43.98000
500+
$43.5402
1000+
$43.1004
1500+
$42.6606
2000+
$42.2208
2500+
$41.781
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the JANTX2N6301P Bipolar Junction Transistor (BJT) by Microchip Technology. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the JANTX2N6301P delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Microchip Technology for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
- Power - Max: 75 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
Related Products
Microchip Technology
JAN2N5685
Renesas Electronics America Inc
2SC2959-AZ
Harris Corporation
D40V1
Microchip Technology
2C2906A-MSCL
Microchip Technology
JANSD2N2369AUBC
onsemi
NJVTIP32BG
Microchip Technology
2N6182
Microchip Technology
JANTX2N3439UA/TR
onsemi
2SC536KF-NP
Microchip Technology