JANTX2N6804
Microsemi Corporation
Microsemi Corporation
MOSFET P-CH 100V 11A TO204AA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The JANTX2N6804 by Microsemi Corporation is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Microsemi Corporation for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-204AA
- Package / Case: TO-204AA, TO-3
Related Products
Infineon Technologies
IRLR7833TR
Infineon Technologies
BSP89L6327HTSA1
Vishay Siliconix
SIE806DF-T1-GE3
Rohm Semiconductor
RQ3E150MNTB1
Infineon Technologies
IPD05N03LA G
Infineon Technologies
IPW65R190E6FKSA1
onsemi
NVD5805NT4G
Microsemi Corporation
APT28F60B
Vishay Siliconix
SI4190DY-T1-GE3
NXP USA Inc.