JANTXV2N3767P
Microchip Technology
Microchip Technology
POWER BJT
$187.50
Available to order
Reference Price (USD)
1+
$187.50000
500+
$185.625
1000+
$183.75
1500+
$181.875
2000+
$180
2500+
$178.125
Exquisite packaging
Discount
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Enhance your circuit designs with the JANTXV2N3767P Bipolar Junction Transistor (BJT) from Microchip Technology. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The JANTXV2N3767P is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Microchip Technology to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 100mA, 1A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
- Power - Max: 25 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
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