JANTXV2N6788
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 100V 6A TO205AF
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the JANTXV2N6788 by Microsemi Corporation, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the JANTXV2N6788 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 800mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
Related Products
Microsemi Corporation
APTC60DAM24CT1G
Central Semiconductor Corp
CTLDM8120-M621H BK
NXP USA Inc.
BUK662R5-30C,118-NXP
Renesas Electronics America Inc
2SJ601(0)-Z-E1-AZ
Infineon Technologies
BSG0812NDATMA1
onsemi
FDZ451PZ-P
Infineon Technologies
IGLD60R190D1AUMA1
Renesas Electronics America Inc
UPD703014BGC-A21-8EU-A
Infineon Technologies
IPD65R600C6ATMA1
Alpha & Omega Semiconductor Inc.