JANTXV2N7334
Microsemi Corporation
Microsemi Corporation
MOSFET 4N-CH 100V 1A MO-036AB
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Discover the high-performance JANTXV2N7334 from Microsemi Corporation, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the JANTXV2N7334 delivers unmatched performance. Trust Microsemi Corporation's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1A
- Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: MO-036AB
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