KSC10080BU
Fairchild Semiconductor
Fairchild Semiconductor
KSC1008OBU - NPN EPITACIAL SILIC
$0.02
Available to order
Reference Price (USD)
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$0.02080
500+
$0.020592
1000+
$0.020384
1500+
$0.020176
2000+
$0.019968
2500+
$0.01976
Exquisite packaging
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Experience unmatched performance with the KSC10080BU Bipolar Junction Transistor (BJT) by Fairchild Semiconductor. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the KSC10080BU delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Fairchild Semiconductor for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V
- Power - Max: 800 mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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