KSD1616AGBU
onsemi
onsemi
TRANS NPN 60V 1A TO92-3
$0.49
Available to order
Reference Price (USD)
1+
$0.47000
10+
$0.35400
100+
$0.20210
500+
$0.13512
1,000+
$0.10446
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the KSD1616AGBU Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The KSD1616AGBU is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 750 mW
- Frequency - Transition: 160MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
Related Products
Sanyo
2SB1229T-AA
Diodes Incorporated
ZXTN2018FQTA
Diodes Incorporated
FZT751TA
Diodes Incorporated
ZUMT618TA
onsemi
2SD1061R
Rohm Semiconductor
2SB1697T100
NTE Electronics, Inc
NTE2350
Diodes Incorporated
FMMT560TA
onsemi
PZTA96T3
STMicroelectronics