LB1233-E
onsemi
onsemi
HIGH-VOLTAGE/LARGE-CURRENT DARLI
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The LB1233-E Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the LB1233-E provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
89100-02TX
onsemi
MJ11030G
onsemi
KSD568OTU
Rohm Semiconductor
2SC5865TLQ
NXP USA Inc.
PVR100AD-B5V0,115
Rohm Semiconductor
2SB1239TV2
Infineon Technologies
BCX6910E6327HTSA1
Diotec Semiconductor
BCX53-16R13
Panasonic Electronic Components
2SD24570QL
onsemi