LSIC1MO120G0120
Littelfuse Inc.
Littelfuse Inc.
MOSFET SIC 1200V 18A TO247-4L
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Meet the LSIC1MO120G0120 by Littelfuse Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The LSIC1MO120G0120 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Littelfuse Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V
- Vgs(th) (Max) @ Id: 4V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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