LSIC1MO120G0160
Littelfuse Inc.
Littelfuse Inc.
MOSFET SIC 1200V 14A TO247-4L
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the LSIC1MO120G0160 by Littelfuse Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the LSIC1MO120G0160 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 20 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Infineon Technologies
IPA50R140CPXK
IXYS
IXTH280N055T
IXYS
IXTV60N30T
Alpha & Omega Semiconductor Inc.
AOL1432A
onsemi
MPF960
Infineon Technologies
SPP20N65C3HKSA1
Infineon Technologies
BSC032N03S
Infineon Technologies
IRL3103D2STRL
Diodes Incorporated
2N7002T-7-F-79
Fairchild Semiconductor