LSK389C SOIC 8L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
LOW NOISE, MONOLITHIC DUAL, N-CH
$6.15
Available to order
Reference Price (USD)
1+
$6.15000
500+
$6.0885
1000+
$6.027
1500+
$5.9655
2000+
$5.904
2500+
$5.8425
Exquisite packaging
Discount
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Introducing the LSK389C SOIC 8L from Linear Integrated Systems, Inc.'s premium Discrete Semiconductor Products - a JFET engineered for high-frequency applications. This RF-optimized transistor offers outstanding gain-bandwidth product and minimal feedback capacitance. The advanced epitaxial process ensures tight parameter distribution and excellent yield. Wireless infrastructure equipment manufacturers utilize the LSK389C SOIC 8L in base station receivers, software-defined radios, and radar systems. Its low intermodulation distortion makes it perfect for multi-carrier cellular systems and satellite transponders. The device also finds use in specialized applications like quantum computing interfaces and terahertz wave detectors, demonstrating its exceptional high-frequency capabilities.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 0.1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 400 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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