LT1161ISW#TRPBF
Analog Devices Inc.
Analog Devices Inc.
IC GATE DRVR HIGH-SIDE 20SOIC
$11.02
Available to order
Reference Price (USD)
1+
$11.02000
500+
$10.9098
1000+
$10.7996
1500+
$10.6894
2000+
$10.5792
2500+
$10.469
Exquisite packaging
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Analog Devices Inc. presents the LT1161ISW#TRPBF as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Independent
- Number of Drivers: 4
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8V ~ 48V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): -
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 20-SO
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