LTC1165CN8#PBF
Analog Devices Inc.
Analog Devices Inc.
IC GATE DRVR HIGH-SIDE 8DIP
$0.00
Available to order
Reference Price (USD)
1+
$6.55000
25+
$4.35160
100+
$3.59800
250+
$3.41812
500+
$3.34100
Exquisite packaging
Discount
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Analog Devices Inc. presents the LTC1165CN8#PBF as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: High-Side
- Channel Type: Independent
- Number of Drivers: 3
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 1.8V ~ 6V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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