MAGX-001214-500L0S
MACOM Technology Solutions
MACOM Technology Solutions
TRANSISTOR GAN 500W 1.2-1.4GHZ
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the MAGX-001214-500L0S RF MOSFET from MACOM Technology Solutions is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The MAGX-001214-500L0S's robust construction ensures long-term reliability even in harsh environments. Choose MACOM Technology Solutions's MAGX-001214-500L0S for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 19.22dB
- Voltage - Test: 50 V
- Current Rating (Amps): 18.1A
- Noise Figure: -
- Current - Test: 400 mA
- Power - Output: 500W
- Voltage - Rated: 65 V
- Package / Case: -
- Supplier Device Package: -
Related Products
NXP USA Inc.
MRF5S21130HR3
NXP USA Inc.
MRF7S19080HSR3
Broadcom Limited
ATF-50189-TR2
NXP USA Inc.
BF1108/L,215
Infineon Technologies
PTFA210601F V4
Ampleon USA Inc.
BLA1011-2
NXP USA Inc.
BF1211WR,115
Infineon Technologies
PTFA192401EV4R250FTMA1
NXP USA Inc.
MRF7S16150HR5
CEL