MAPR-002729-170M00
MACOM Technology Solutions
MACOM Technology Solutions
RF TRANS NPN 65V
$492.39
Available to order
Reference Price (USD)
24+
$473.64208
Exquisite packaging
Discount
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Introducing the MAPR-002729-170M00, a high-performance RF Bipolar Junction Transistor (BJT) from MACOM Technology Solutions, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The MAPR-002729-170M00 features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on MACOM Technology Solutions for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 9.11dB ~ 9.69dB
- Power - Max: 170W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 27A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: -
- Supplier Device Package: -
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