MB30H100CTHE3_B/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO263
$1.35
Available to order
Reference Price (USD)
1+
$1.34750
500+
$1.334025
1000+
$1.32055
1500+
$1.307075
2000+
$1.2936
2500+
$1.280125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Vishay General Semiconductor - Diodes Division's MB30H100CTHE3_B/I, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust Vishay General Semiconductor - Diodes Division's decades of semiconductor expertise embedded in every MB30H100CTHE3_B/I for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
Related Products
Sanken
FML-12S
onsemi
FFPF20UP20DNTU
Power Integrations
LQA40B150C
Infineon Technologies
IDW40G120C5BFKSA1
Vishay General Semiconductor - Diodes Division
SS10P3CLHM3_A/I
Microsemi Corporation
FST50100
Taiwan Semiconductor Corporation
MBRI30100CT
Vishay General Semiconductor - Diodes Division
V20PW12C-M3/I
Yangzhou Yangjie Electronic Technology Co.,Ltd
MUR1040FCT-B1-0000HF
STMicroelectronics