MBR12035CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 35V 120A 2TOWER
$68.85
Available to order
Reference Price (USD)
25+
$65.65840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, GeneSiC Semiconductor's MBR12035CT represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With GeneSiC Semiconductor's proprietary screening processes, the MBR12035CT guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io) (per Diode): 120A (DC)
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
Related Products
SMC Diode Solutions
401CMQ035
Rohm Semiconductor
DAP202FMT106
Vishay General Semiconductor - Diodes Division
GI2404-E3/45
Rohm Semiconductor
RF1001NS2DTL
Micro Commercial Co
MMBD4448HTS-TP
Central Semiconductor Corp
CUDD16-08C TR13 PBFREE
Rohm Semiconductor
RB088BM-30FHTL
GeneSiC Semiconductor
MURTA20040R
Central Semiconductor Corp
CMXD4448 TR PBFREE
Vishay General Semiconductor - Diodes Division