MBR12035CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 35V 120A 2TOWER
$68.85
Available to order
Reference Price (USD)
25+
$65.65840
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing GeneSiC Semiconductor's MBR12035CTR, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust GeneSiC Semiconductor's decades of semiconductor expertise embedded in every MBR12035CTR for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io) (per Diode): 120A (DC)
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 20 V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
Related Products
Microchip Technology
JANTXV1N7037CCU1
Vishay General Semiconductor - Diodes Division
VS-VSKJ166/04PBF
Vishay General Semiconductor - Diodes Division
V30D60CHM3_A/I
Renesas Electronics America Inc
RKD703KL#R1
Renesas Electronics America Inc
RKD703KL#R6
IXYS
MDMA1400C1600CC
IXYS
DNA90YC2200NA
Infineon Technologies
DD171N18KHPSA2
Microchip Technology
681-4
Semtech Corporation