Shopping cart

Subtotal: $0.00

MBR200150CTR

GeneSiC Semiconductor
MBR200150CTR Preview
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 100A 2 TOWER
$90.14
Available to order
Reference Price (USD)
25+
$70.90600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3 mA @ 150 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower

Related Products

Vishay General Semiconductor - Diodes Division

VS-VSKDS403/100

GeneSiC Semiconductor

MBR30060CTR

Micro Commercial Co

BAW56HE3-TP

Diotec Semiconductor

UGB16JCD2

Semtech Corporation

SET030803

Vishay General Semiconductor - Diodes Division

VS-VSKJ166/16PBF

Vishay General Semiconductor - Diodes Division

VS-VSUD200CH60PBF

Microchip Technology

1N4148UBCD

Top