MBR20030CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 30V 200A 2TOWER
$90.14
Available to order
Reference Price (USD)
25+
$70.90600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MBR20030CTR from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the MBR20030CTR maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
Related Products
Micro Commercial Co
MBR30150FCT-BP
Vishay General Semiconductor - Diodes Division
VT2045CBP-M3/4W
Panjit International Inc.
MBR6100FCT_T0_00001
IXYS
DHG10C600PB
Diodes Incorporated
BAV23C-7-F
IXYS
MEK75-12DA
onsemi
NTST30120CTG
GeneSiC Semiconductor
MSRT200120A
Vishay General Semiconductor - Diodes Division
VIT6045C-M3/4W
STMicroelectronics