MBR400100CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 100V 200A 2TOWER
$113.25
Available to order
Reference Price (USD)
1+
$52.71000
10+
$49.61300
100+
$44.34140
Exquisite packaging
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The MBR400100CTR from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the MBR400100CTR maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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