MBR40080CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 80V 200A 2TOWER
$98.82
Available to order
Reference Price (USD)
25+
$58.14000
Exquisite packaging
Discount
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For engineers specializing in power electronics, the MBR40080CT by GeneSiC Semiconductor represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With GeneSiC Semiconductor's patented junction design, the MBR40080CT achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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