MBR600100CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 100V 300A 2TOWER
$129.36
Available to order
Reference Price (USD)
25+
$96.34800
Exquisite packaging
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The MBR600100CT rectifier array from GeneSiC Semiconductor redefines efficiency in the Diodes - Rectifiers - Arrays classification. Its optimized chip geometry enables higher surge withstand capability, critical for automotive alternators and arc suppression circuits. This product shines in three-phase rectification and snubber networks, offering aerospace-grade reliability. GeneSiC Semiconductor's precision manufacturing ensures each MBR600100CT meets stringent quality standards for mission-critical applications.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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