MBR600200CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 200V 300A 2 TOWER
$129.36
Available to order
Reference Price (USD)
25+
$127.94160
Exquisite packaging
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Introducing GeneSiC Semiconductor's MBR600200CTR, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust GeneSiC Semiconductor's decades of semiconductor expertise embedded in every MBR600200CTR for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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