MBR60040CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 40V 300A 2TOWER
$145.21
Available to order
Reference Price (USD)
1+
$123.58000
10+
$115.50500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, GeneSiC Semiconductor's MBR60040CTR represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With GeneSiC Semiconductor's proprietary screening processes, the MBR60040CTR guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
Related Products
Micro Commercial Co
MD165C16D2-BP
Vishay General Semiconductor - Diodes Division
VS-30CTQ080STRL-M3
Panjit International Inc.
BAS70CW_R1_00001
KYOCERA AVX
PD100MYN16
Panjit International Inc.
BAT54CTB6_R1_00001
Vishay General Semiconductor - Diodes Division
VB60120C-E3/8W
Taiwan Semiconductor Corporation
TSF10H150C
Nexperia USA Inc.
PMEG2005CT,215
SMC Diode Solutions
32CTQ030S
Vishay General Semiconductor - Diodes Division