MBRB10H100CT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO263
$1.83
Available to order
Reference Price (USD)
800+
$1.11711
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Vishay General Semiconductor - Diodes Division's MBRB10H100CT-E3/81 represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Vishay General Semiconductor - Diodes Division's proprietary screening processes, the MBRB10H100CT-E3/81 guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 760 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
Related Products
Nexperia USA Inc.
BAS40-06,215
SMC Diode Solutions
SDURB1040CT
STMicroelectronics
STPS41L60CT
Rohm Semiconductor
UMP11NFHTN
onsemi
SNRVBD660CTT4G
STMicroelectronics
STPS3030CT
Central Semiconductor Corp
CMXD2004TO TR PBFREE
Vishay General Semiconductor - Diodes Division
VS-42CTQ030-1-M3
Yangzhou Yangjie Electronic Technology Co.,Ltd
BAV23C-F2-0000HF
onsemi