MBRB750HE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 7.5A TO263AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MBRB750HE3_A/P by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The MBRB750HE3_A/P is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the MBRB750HE3_A/P delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -65°C ~ 150°C
Related Products
Harris Corporation
RUR3090
Taiwan Semiconductor Corporation
SF23GHA0G
Taiwan Semiconductor Corporation
MURF8L60
STMicroelectronics
STTH1212G-TR
Taiwan Semiconductor Corporation
ES1BL MHG
Diodes Incorporated
6A2-B
Taiwan Semiconductor Corporation
ES15JLWHRVG
Taiwan Semiconductor Corporation
SR1202 R0G
Diodes Incorporated
ES2C-13
Vishay General Semiconductor - Diodes Division