MBRT200150R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 100A 3 TOWER
$98.82
Available to order
Reference Price (USD)
25+
$70.90600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For engineers specializing in power electronics, the MBRT200150R by GeneSiC Semiconductor represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With GeneSiC Semiconductor's patented junction design, the MBRT200150R achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 100 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 150 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
Related Products
Toshiba Semiconductor and Storage
1SS392,LF
Diotec Semiconductor
SBCT1045
Vishay General Semiconductor - Diodes Division
M6060P-E3/45
SMC Diode Solutions
SDURB3030CT
NXP USA Inc.
1PS76SB70/DG/B2115
Littelfuse Inc.
MBRD10200CT
SMC Diode Solutions
444CMQ035
Vishay General Semiconductor - Diodes Division
V30D45C-M3/I
Diodes Incorporated
BAV23-7
Taiwan Semiconductor Corporation