MD2009DFP
STMicroelectronics
STMicroelectronics
TRANS NPN 700V 10A TO220FP
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Enhance your circuit designs with the MD2009DFP Bipolar Junction Transistor (BJT) from STMicroelectronics. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MD2009DFP is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust STMicroelectronics to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 700 V
- Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220 Full Pack
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