MDS60L
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 65V 1.09GHZ 55AW
$0.00
Available to order
Reference Price (USD)
50+
$240.03680
Exquisite packaging
Discount
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Introducing the MDS60L, a high-performance RF Bipolar Junction Transistor (BJT) from Microsemi Corporation, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The MDS60L features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Microsemi Corporation for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 120W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Current - Collector (Ic) (Max): 4A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55AW
- Supplier Device Package: 55AW
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