MHT1004NR3
NXP USA Inc.
NXP USA Inc.
RF POWER LDMOS TRANSISTOR 2450
$0.00
Available to order
Reference Price (USD)
250+
$112.07912
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the MHT1004NR3 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MHT1004NR3's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MHT1004NR3 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.45GHz
- Gain: 15.2dB
- Voltage - Test: 32 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 280W
- Voltage - Rated: 65 V
- Package / Case: OM-780-2
- Supplier Device Package: OM-780-2
Related Products
onsemi
J305
Ampleon USA Inc.
BLF7G21L-160P,118
Freescale Semiconductor
MRF8S21100HR5
onsemi
J310_D26Z
onsemi
MMBF4416LT1G
NXP USA Inc.
MRF6V13250HR3
MACOM Technology Solutions
MAGX-000040-00500P
Ampleon USA Inc.
BLF6G27-10,118
NXP USA Inc.
MRF9030NR1
NXP USA Inc.