MIO1200-33E10
IXYS
IXYS
IGBT MODULE 3300V 1200A E10
$0.00
Available to order
Reference Price (USD)
1+
$1,633.91000
Exquisite packaging
Discount
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Engineered for excellence, the MIO1200-33E10 IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The MIO1200-33E10 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the MIO1200-33E10.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1200 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1200A
- Current - Collector Cutoff (Max): 120 mA
- Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E10
- Supplier Device Package: E10
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