MIXA225RF1200TSF
IXYS
IXYS
IGBT MOD 1200V 360A 1100W
$0.00
Available to order
Reference Price (USD)
3+
$76.84000
Exquisite packaging
Discount
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IXYS's MIXA225RF1200TSF sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the MIXA225RF1200TSF in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the MIXA225RF1200TSF power module.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 360 A
- Power - Max: 1100 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 225A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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