MIXA30W1200TML
IXYS
IXYS
IGBT MODULE 1200V 43A 150W E1
$0.00
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Reference Price (USD)
10+
$39.34000
Exquisite packaging
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Experience next-generation power control with IXYS's MIXA30W1200TML IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MIXA30W1200TML offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MIXA30W1200TML in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MIXA30W1200TML IGBT module.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 43 A
- Power - Max: 150 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 150 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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