MIXA61H1200ED
IXYS
IXYS
IGBT MODULE 1200V 85A 290W E2
$80.89
Available to order
Reference Price (USD)
6+
$58.03833
Exquisite packaging
Discount
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Engineered for excellence, the MIXA61H1200ED IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The MIXA61H1200ED finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the MIXA61H1200ED.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 85 A
- Power - Max: 290 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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