MJ10009
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 500V 20A TO3
$8.00
Available to order
Reference Price (USD)
1+
$8.00000
500+
$7.92
1000+
$7.84
1500+
$7.76
2000+
$7.68
2500+
$7.6
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the MJ10009 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the MJ10009 delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 20A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Power - Max: 175 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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NTE Electronics, Inc