MKI100-12F8
IXYS
IXYS
IGBT MODULE 1200V 125A 640W E3
$156.65
Available to order
Reference Price (USD)
5+
$124.84800
Exquisite packaging
Discount
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IXYS's MKI100-12F8 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the MKI100-12F8 in industrial servo drives or medium-voltage frequency converters. Trust IXYS's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 125 A
- Power - Max: 640 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
- Current - Collector Cutoff (Max): 1.3 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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