MMBTA43LT1G
onsemi
onsemi
TRANS NPN 200V 0.05A SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMBTA43LT1G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the MMBTA43LT1G ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of MMBTA43LT1G and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 225 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Harris Corporation
BD534
Microchip Technology
JANTXV2N2484
NXP USA Inc.
PBSS4140S,126
Taiwan Semiconductor Corporation
KTC3198-O A1G
Micro Commercial Co
BC547A-AP
Microchip Technology
JANKCBH2N2222A
onsemi
2SD1229
NXP USA Inc.
BC807-40QA147
Fairchild Semiconductor
BSR13
NXP USA Inc.