MMBTH10LT1G
onsemi
onsemi
RF TRANS NPN 25V 650MHZ SOT23-3
$0.28
Available to order
Reference Price (USD)
3,000+
$0.04135
6,000+
$0.03616
15,000+
$0.03097
30,000+
$0.02924
75,000+
$0.02751
150,000+
$0.02405
Exquisite packaging
Discount
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The MMBTH10LT1G RF Bipolar Junction Transistor (BJT) by onsemi is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust onsemi for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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