MMBTH10RG
Fairchild Semiconductor
Fairchild Semiconductor
RF 0.05A, ULTRA HIGH FREQ BAND
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06920
6,000+
$0.06228
15,000+
$0.05536
30,000+
$0.05190
75,000+
$0.04602
150,000+
$0.04429
Exquisite packaging
Discount
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The MMBTH10RG RF Bipolar Junction Transistor (BJT) by Fairchild Semiconductor is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the MMBTH10RG is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Fairchild Semiconductor for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 450MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 6V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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