MMDT2222V-7
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 40V 0.6A SOT563
$0.45
Available to order
Reference Price (USD)
3,000+
$0.10450
6,000+
$0.09925
15,000+
$0.09138
30,000+
$0.08613
75,000+
$0.08000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the MMDT2222V-7 Diodes Incorporated s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the MMDT2222V-7 demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Rohm Semiconductor
IMT4T108
Microchip Technology
JANSF2N3810
Intersil
CA3083M
NXP USA Inc.
BCM847DS/DG/B2115
NXP USA Inc.
PBSS4230PANP,115
onsemi
NSS40301MDR2G
Nexperia USA Inc.
BC847RAPNZ
Sanken
SMA4036
Nexperia USA Inc.
BC847DS,115
STMicroelectronics