MMDT5401-7-F
Diodes Incorporated
Diodes Incorporated
TRANS 2PNP 150V 0.2A SOT363
$0.46
Available to order
Reference Price (USD)
3,000+
$0.09200
6,000+
$0.08360
15,000+
$0.07520
30,000+
$0.07100
75,000+
$0.06400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMDT5401-7-F from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision amplification and switching applications. This Discrete Semiconductor Product integrates multiple transistors in a single package, offering enhanced thermal stability and space-saving benefits. Ideal for analog circuits, motor control, and signal processing, the MMDT5401-7-F ensures reliable performance in industrial automation, automotive electronics, and consumer devices. Its compact design and low power consumption make it a preferred choice for engineers seeking efficiency and durability.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Microchip Technology
JANTXV2N6987U/TR
Infineon Technologies
BCM856SH6327XTSA1
onsemi
FMB2227A
Micro Commercial Co
MMDT4403-TP
Toshiba Semiconductor and Storage
HN1C01FU-Y,LF
onsemi
NST3946DP6T5G
Allegro MicroSystems
ULS2075H-883
Diodes Incorporated
ZDT6753TA
Infineon Technologies
BC846UE6327HTSA1
onsemi