MMRF1006HSR5
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 120V 450MHZ NI-1230S
$0.00
Available to order
Reference Price (USD)
50+
$443.27560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the MMRF1006HSR5 RF MOSFET from NXP USA Inc. (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The MMRF1006HSR5's advanced design ensures maximum power transfer with minimal distortion. With NXP USA Inc.'s expertise in semiconductor innovation, the MMRF1006HSR5 provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 450MHz
- Gain: 20dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 1000W
- Voltage - Rated: 120 V
- Package / Case: NI-1230S-4
- Supplier Device Package: NI-1230S-4
Related Products
MACOM Technology Solutions
MAGX-000035-01000P
Freescale Semiconductor
MRF6VP121KHR5178
Wolfspeed, Inc.
PTAC260302FC-V1-R250
NXP USA Inc.
BLF4G20LS-130,112
NXP USA Inc.
MMRF1306HSR5
MACOM Technology Solutions
MAGX-000025-150000
NXP USA Inc.
MRF8S8260HSR3
Wolfspeed, Inc.
PTFB093608FV-V3-R0
NXP USA Inc.
MRF21045LR5
Wolfspeed, Inc.