MMRF1018NBR1
NXP USA Inc.
NXP USA Inc.
FET RF 120V 860MHZ
$0.00
Available to order
Reference Price (USD)
500+
$52.08546
Exquisite packaging
Discount
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The MMRF1018NBR1 by NXP USA Inc. is a top-tier RF MOSFET transistor in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - RF applications. This component offers exceptional high-frequency characteristics, including low noise figure, high gain, and excellent phase linearity. It's particularly effective in applications such as drone communication systems, satellite phones, and test measurement equipment. The MMRF1018NBR1's robust design ensures reliable operation across temperature variations and demanding operating conditions. Trust NXP USA Inc.'s MMRF1018NBR1 to provide the performance and durability needed for advanced RF systems where precision and reliability are non-negotiable.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 860MHz
- Gain: 22dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 350 mA
- Power - Output: 18W
- Voltage - Rated: 120 V
- Package / Case: TO-272BB
- Supplier Device Package: TO-272 WB-4
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