MMSZ5230B-E3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 4.7V 500MW SOD123
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MMSZ5230B-E3-08 by Vishay General Semiconductor - Diodes Division is a premium single Zener diode, part of the Discrete Semiconductor Products range. This diode is crafted for precision and reliability, offering features like excellent temperature stability and low reverse leakage current. It is ideal for applications requiring consistent voltage regulation, such as in power supplies for LED lighting and audio amplifiers. The MMSZ5230B-E3-08 is also a key component in telecommunications infrastructure, where it maintains signal integrity by stabilizing voltage levels. Furthermore, it is used in renewable energy systems, such as solar panels and wind turbines, to protect against voltage spikes and ensure efficient energy conversion.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 4.7 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 19 Ohms
- Current - Reverse Leakage @ Vr: 5 µA @ 2 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
Related Products
Panjit International Inc.
PZS5230BCH_R1_00001
Microchip Technology
JANTX1N4972US/TR
Panjit International Inc.
1N4755A_R2_00001
onsemi
SZMMSZ5228BT1G
Central Semiconductor Corp
1N4739A TR PBFREE
Microchip Technology
SMBJ5362AE3/TR13
NTE Electronics, Inc
NTE5250AK
Vishay General Semiconductor - Diodes Division
BZX384C10-HE3-18
Microchip Technology
JANTXV1N4117UR-1/TR
Comchip Technology