MNS1N5822US/TR
Microchip Technology
Microchip Technology
MNS1N5822US/TR
$62.38
Available to order
Reference Price (USD)
1+
$62.38500
500+
$61.76115
1000+
$61.1373
1500+
$60.51345
2000+
$59.8896
2500+
$59.26575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MNS1N5822US/TR from Microchip Technology is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Microchip Technology's MNS1N5822US/TR for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 125°C
Related Products
onsemi
NRTS3060MFST3G
EIC SEMICONDUCTOR INC.
BYD13GBULK
Vishay General Semiconductor - Diodes Division
VS-70HF100M
Comchip Technology
SS520F-HF
Solid State Inc.
16F120
GeneSiC Semiconductor
1N5831R
Microchip Technology
1N1306
GeneSiC Semiconductor
S400Q
EIC SEMICONDUCTOR INC.
1N5392T/R
Microchip Technology